Method for reducing defect concentrations in crystals

A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high...

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Bibliographische Detailangaben
Hauptverfasser: D'EVELYN, MARK PHILIP, ANTHONY, THOMAS RICHARD, LEVINSON, LIONEL MONTY, LUCEK, JOHN WILLIAM, ARTHUR, STEPHEN DALEY, VAGARALLI, SURESH SHANKARAPPA, ROWLAND, LARRY BURTON
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.