Device for manufacturing a mask by plasma etching of a semiconductor substrate

The device has a semiconductor substrate whose surface is covered with a transmission mask to protect a zone not to be etched and to exposes pattern zones (31a, 31b) to be etched. A generation unit generates plasma in the form of flow of ions towards the substrate. Ions ionizing unit has vertical pl...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	PUECH, MICHEL, CHABLOZ, MARTIAL
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The device has a semiconductor substrate whose surface is covered with a transmission mask to protect a zone not to be etched and to exposes pattern zones (31a, 31b) to be etched. A generation unit generates plasma in the form of flow of ions towards the substrate. Ions ionizing unit has vertical plates (33a-33e) forming a screen placed above the substrate and along a limit separating the zones (31a, 31b) and the zone not to be etched.