Schottky diode with vertical barrier

The diode has a nickel silicide (39) arranged at an interface between an anode electrode (31) and a substrate (33) for forming a schottky barrier. Conductive fingers (36) extend radially from the anode electrode and are surrounded with an insulating layer. An upper metallization contacts with the an...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LANOIS, FREDERIC, NIZOU, SYLVAIN
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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