Schottky diode with vertical barrier
The diode has a nickel silicide (39) arranged at an interface between an anode electrode (31) and a substrate (33) for forming a schottky barrier. Conductive fingers (36) extend radially from the anode electrode and are surrounded with an insulating layer. An upper metallization contacts with the an...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | The diode has a nickel silicide (39) arranged at an interface between an anode electrode (31) and a substrate (33) for forming a schottky barrier. Conductive fingers (36) extend radially from the anode electrode and are surrounded with an insulating layer. An upper metallization contacts with the anode electrode and a lower metallization contacts with a cathode electrode. |
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