Manufacturing method of local interconnect structure for a CMOS image sensor

Manufacturing method of local interconnect structure for a CMOS image sensor

A self-aligned silicide (salicide) process is used to form a local interconnect for a CMOS image sensor consistent with a conventional CMOS image sensor process flow. An oxide layer is deposited over the pixel array of the image sensor. Portions of the oxide layer is removed and a metal layer is dep...

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Bibliographische Detailangaben
1. Verfasser: RHODES, HOWARD E
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
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ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A self-aligned silicide (salicide) process is used to form a local interconnect for a CMOS image sensor consistent with a conventional CMOS image sensor process flow. An oxide layer is deposited over the pixel array of the image sensor. Portions of the oxide layer is removed and a metal layer is deposited. The metal layer is annealed to form a metal silicide. Optionally, a protective oxide layer is then deposited.