Method of making a semiconductor device having a voltage withstanding PMOSFET semiconductor structure and an NMOSFET semiconductor structure

Method of making a semiconductor device having a voltage withstanding PMOSFET semiconductor structure and an NMOSFET semiconductor structure

The method involves producing an N-doped well in a P-doped semiconductor substrate by high-voltage ion implantation. An N-doped channel region between a P-doped source region and a P-doped drain region, is produced in a P-doped inner zone of the N-doped well. The regions are arranged such that the P...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SCHEERER JOACHIM DR, GRUETZEDICK HARTMUT DR
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The method involves producing an N-doped well in a P-doped semiconductor substrate by high-voltage ion implantation. An N-doped channel region between a P-doped source region and a P-doped drain region, is produced in a P-doped inner zone of the N-doped well. The regions are arranged such that the P-doped inner zone of the N-doped well remains as a drift zone between the channel and drain regions.