Method and masks for reducing the impact of stray light in optical lithography

The present invention discloses a method for reducing the influence of the spread of the transmitted light on the feature size during optical lithography. The method comprises at least two irradiation steps. During a first irradiation step the resist is exposed with the original mask, i.e. comprisin...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	LEUNISSEN, PETER, YOUNGANG, KIM
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention discloses a method for reducing the influence of the spread of the transmitted light on the feature size during optical lithography. The method comprises at least two irradiation steps. During a first irradiation step the resist is exposed with the original mask, i.e. comprising substantially the pattern to be obtained in the layer. Thereafter, without developing the exposed resist, an irradiation step with at least one exposure is performed whereby the resist is exposed with a second mask, being the inverse of the original mask. The exposures of the second irradiation step are defocused compared to the first irradiation step.