Deposition of TiN films in a batch reactor

Titanium nitride (TiN) films are formed in a batch reactor (10) using titanium chloride (TiCl 4 ) and ammonia (NH 3 ) as precursors. The TiCl 4 is flowed into the reactor (10) in temporally separated pulses. The NH 3 can also be flowed into the reactor (10) in temporally spaced pulses which alternat...

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Bibliographische Detailangaben
Hauptverfasser:	De Blank, Marinus J, Vandezande, Lieve, Bankras, Radko Gerard, Hasper, Albert, Snijders, Gert-Jan
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Titanium nitride (TiN) films are formed in a batch reactor (10) using titanium chloride (TiCl 4 ) and ammonia (NH 3 ) as precursors. The TiCl 4 is flowed into the reactor (10) in temporally separated pulses. The NH 3 can also be flowed into the reactor (10) in temporally spaced pulses which alternate with the TiCl 4 pulses, or the NH 3 can be flowed continuously into the reactor (10) while the TiCl 4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.