METHODS FOR FORMING ALUMINUM CONTAINING FILMS UTILIZING AMINO ALUMINUM PRECURSORS

A method of forming an aluminum containing film on a substrate includes providing a precursor having the chemical structure: Al(NR1R2)(NR3R4)(NR5R6); where each of R1, R2, R3, R4, R5 and R6 is independently selected from the group consisting of hydrogen and an alkyl group including at least two carb...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	JURSICH, GREGORY, M, INMAN, RONALD, S
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method of forming an aluminum containing film on a substrate includes providing a precursor having the chemical structure: Al(NR1R2)(NR3R4)(NR5R6); where each of R1, R2, R3, R4, R5 and R6 is independently selected from the group consisting of hydrogen and an alkyl group including at least two carbon atoms. The precursor is utilized to form a film on the substrate including at least one of aluminum oxide, aluminum nitride and aluminum oxy-nitride. Each of the R1-R6 groups can be the same or different and can by straight or branched chain alkyls. An exemplary precursor that has is useful in forming aluminum containing films is tris diethylamino aluminum.