Oxygen free plasma stripping process

A method for stripping photoresist 16 and/or removing post etch residues from an exposed low k dielectric layer 14 of a semiconductor wafer 98 in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate th...

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Bibliographische Detailangaben
Hauptverfasser:	HAN, QINGYUAN, PALANIKUMARAN, SAKTHIVEL, BERRY III, IVAN LOUIS, DAHIMENE, MAHMOUD, RUFFIN, RICKY
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for stripping photoresist 16 and/or removing post etch residues from an exposed low k dielectric layer 14 of a semiconductor wafer 98 in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles. The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist 16 and/or post etch residues to form volatile gases which are then removed from the wafer 98 by a gas stream. The oxygen free, plasma gas composition for stripping photoresist 16 and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.