Homoepitaxial growth of SiC on low off-axis SiC wafers

Homoepitaxial growth of SiC on low off-axis SiC wafers

A method for producing, on an SiC substrate (1), SiC homoepitaxial layers (3) of the same polytype as said substrate, wherein the method comprises: - growing said layers (3) on a surface of the SiC substrate (1), wherein said surface is inclined relative to the (0001) basal plane at an angle higher...

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Bibliographische Detailangaben
Hauptverfasser: Bergman, Peder, Hallin, Christer, Ellison, Alexandre, Magnusson, Björn
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A method for producing, on an SiC substrate (1), SiC homoepitaxial layers (3) of the same polytype as said substrate, wherein the method comprises: - growing said layers (3) on a surface of the SiC substrate (1), wherein said surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, and further that an homoepitaxial growth is started by forming a boundary layer (2) with a thickness up to 1 µm.