Method of producing a solid-state imaging device

To provide a back-illuminated solid-state imaging device able to suppress a crystal defect caused by a metal contamination in a process and to suppress a dark current to improve quantum efficiency, a camera including the same and a method of producing the same, having the steps of forming a structure including a substrate, a first conductive type epitaxial layer and a first conductive type impurity layer, the first conductive type epitaxial layer being formed on the substrate to have a first impurity concentration, and the first conductive type impurity layer being formed in a boundary region to have a second impurity concentration higher than the first impurity concentration of the epitaxial layer; forming a second conductive type region storing a charge generated by a photoelectric conversion in the epitaxial layer; forming an interconnection layer on the epitaxial layer; and removing the substrate.