SILICON SUBSTRATE AND METHOD OF FORMING THE SAME
A silicon substrate 1 has a structure in which a depression of a silicon crystal is formed on at least one principal surface 2 side of a crystalline silicon substrate and which has a vitreous region 3 filled in the depression and consisting primarily of silicon oxide. The vitreous region 3 is formed...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A silicon substrate 1 has a structure in which a depression of a silicon crystal is formed on at least one principal surface 2 side of a crystalline silicon substrate and which has a vitreous region 3 filled in the depression and consisting primarily of silicon oxide. The vitreous region 3 is formed so that the glass transition temperature Tg thereof is lower than that of pure silica glass and not more than 900 DEG C. This configuration realizes the silicon substrate in which internal strain is reduced between glass and the silicon crystal, and a forming method thereof. |
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