THIN FILM FORMING APPARATUS AND METHOD FOR FORMING THIN FILM
A thin film forming apparatus comprises: a first electrode and a second electrode whose respective discharge surfaces face each other to form a discharge space to generate a high frequency electric field across the discharge space; and a gas supply unit for supplying a gas including a thin film form...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | FUKAZAWA, KOJI MAEDA, KIKUO TODA, YOSHIROU |
| description | A thin film forming apparatus comprises: a first electrode and a second electrode whose respective discharge surfaces face each other to form a discharge space to generate a high frequency electric field across the discharge space; and a gas supply unit for supplying a gas including a thin film formation gas to the discharge space so that the high frequency electric field activate the gas, and for forming a thin film on the substrate by exposing the substrate to the activated gas. Further, the thin film forming apparatus includes a film transporting mechanism which transports a protecting film for preventing at least one of the first electrode and the second electrode from being exposed to the activated gas, while the protecting film is contacted with at least one of the discharge surfaces of the first electrode and second electrode with at least a part of a surface other than the discharge surface which continues to the discharge surface. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP1609884B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP1609884B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP1609884B13</originalsourceid><addsrcrecordid>eNrjZLAJ8fD0U3Dz9PFVcPMP8vX0c1dwDAhwDHIMCQ1WcPRzUfB1DfHwdwFJwhXAtfAwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUknjXAEMzA0sLCxMnQ2MilAAAmnUo-w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>THIN FILM FORMING APPARATUS AND METHOD FOR FORMING THIN FILM</title><source>esp@cenet</source><creator>FUKAZAWA, KOJI ; MAEDA, KIKUO ; TODA, YOSHIROU</creator><creatorcontrib>FUKAZAWA, KOJI ; MAEDA, KIKUO ; TODA, YOSHIROU</creatorcontrib><description>A thin film forming apparatus comprises: a first electrode and a second electrode whose respective discharge surfaces face each other to form a discharge space to generate a high frequency electric field across the discharge space; and a gas supply unit for supplying a gas including a thin film formation gas to the discharge space so that the high frequency electric field activate the gas, and for forming a thin film on the substrate by exposing the substrate to the activated gas. Further, the thin film forming apparatus includes a film transporting mechanism which transports a protecting film for preventing at least one of the first electrode and the second electrode from being exposed to the activated gas, while the protecting film is contacted with at least one of the discharge surfaces of the first electrode and second electrode with at least a part of a surface other than the discharge surface which continues to the discharge surface.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130828&DB=EPODOC&CC=EP&NR=1609884B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130828&DB=EPODOC&CC=EP&NR=1609884B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUKAZAWA, KOJI</creatorcontrib><creatorcontrib>MAEDA, KIKUO</creatorcontrib><creatorcontrib>TODA, YOSHIROU</creatorcontrib><title>THIN FILM FORMING APPARATUS AND METHOD FOR FORMING THIN FILM</title><description>A thin film forming apparatus comprises: a first electrode and a second electrode whose respective discharge surfaces face each other to form a discharge space to generate a high frequency electric field across the discharge space; and a gas supply unit for supplying a gas including a thin film formation gas to the discharge space so that the high frequency electric field activate the gas, and for forming a thin film on the substrate by exposing the substrate to the activated gas. Further, the thin film forming apparatus includes a film transporting mechanism which transports a protecting film for preventing at least one of the first electrode and the second electrode from being exposed to the activated gas, while the protecting film is contacted with at least one of the discharge surfaces of the first electrode and second electrode with at least a part of a surface other than the discharge surface which continues to the discharge surface.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAJ8fD0U3Dz9PFVcPMP8vX0c1dwDAhwDHIMCQ1WcPRzUfB1DfHwdwFJwhXAtfAwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUknjXAEMzA0sLCxMnQ2MilAAAmnUo-w</recordid><startdate>20130828</startdate><enddate>20130828</enddate><creator>FUKAZAWA, KOJI</creator><creator>MAEDA, KIKUO</creator><creator>TODA, YOSHIROU</creator><scope>EVB</scope></search><sort><creationdate>20130828</creationdate><title>THIN FILM FORMING APPARATUS AND METHOD FOR FORMING THIN FILM</title><author>FUKAZAWA, KOJI ; MAEDA, KIKUO ; TODA, YOSHIROU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1609884B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>FUKAZAWA, KOJI</creatorcontrib><creatorcontrib>MAEDA, KIKUO</creatorcontrib><creatorcontrib>TODA, YOSHIROU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUKAZAWA, KOJI</au><au>MAEDA, KIKUO</au><au>TODA, YOSHIROU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM FORMING APPARATUS AND METHOD FOR FORMING THIN FILM</title><date>2013-08-28</date><risdate>2013</risdate><abstract>A thin film forming apparatus comprises: a first electrode and a second electrode whose respective discharge surfaces face each other to form a discharge space to generate a high frequency electric field across the discharge space; and a gas supply unit for supplying a gas including a thin film formation gas to the discharge space so that the high frequency electric field activate the gas, and for forming a thin film on the substrate by exposing the substrate to the activated gas. Further, the thin film forming apparatus includes a film transporting mechanism which transports a protecting film for preventing at least one of the first electrode and the second electrode from being exposed to the activated gas, while the protecting film is contacted with at least one of the discharge surfaces of the first electrode and second electrode with at least a part of a surface other than the discharge surface which continues to the discharge surface.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP1609884B1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | THIN FILM FORMING APPARATUS AND METHOD FOR FORMING THIN FILM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T10%3A34%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FUKAZAWA,%20KOJI&rft.date=2013-08-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP1609884B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |