METHOD OF PRODUCING HIGH QUALITY RELAXED SILICON GERMANIUM LAYERS

A method for minimizing particle generation during deposition of a graded Si1−xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and deposit...

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Bibliographische Detailangaben
Hauptverfasser: FITZGERALD, Eugene, A, VINEIS, Christopher, J, CURRIE, Matthew, T, LANGDO, Thomas, A, WESTHOFF, Richard
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A method for minimizing particle generation during deposition of a graded Si1−xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1−xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.