Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method for semiconductor wafers

Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method for semiconductor wafers

There is provided a chemical mechanical polishing pad (1) containing a polishing substrate having a polishing surface and a light-transmitting member (12) fused to the polishing substrate. The sectional form of the light-transmitting member when it is cut with a plane parallel to the polishing surfa...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: OKAMOTO, TAKAHIRO, HOSAKA, YUKIO, SHIHO, HIROSHI, MIYAUCHI, HIROYUKI, HASEGAWA, KOU, KAWAHASHI, NOBUO
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
DRESSING OR CONDITIONING OF ABRADING SURFACES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
TOOLS FOR GRINDING, BUFFING, OR SHARPENING
TRANSPORTING
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Beschreibung
Zusammenfassung:There is provided a chemical mechanical polishing pad (1) containing a polishing substrate having a polishing surface and a light-transmitting member (12) fused to the polishing substrate. The sectional form of the light-transmitting member when it is cut with a plane parallel to the polishing surface is elliptic with a value obtained by dividing its long diameter by its short diameter of more than 1.The pad is capable of transmitting end-point detection light without reducing its polishing efficiency in polishing a semiconductor wafer.