IMPROVED METHOD FOR READING A NON-VOLATILE MEMORY CELL ADJACENT TO AN INACTIVE REGION OF A NON-VOLATILE MEMORY CELL ARRAY

An array of non-volatile memory cells includes active columns of cells wherein a data pattern may be stored adjacent to damaged or inactive columns wherein data is not stored. A method of storing a data pattern and reproducing the data pattern within such an array comprises storing a charge within a...

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Hauptverfasser: RUNNION, EDWARD, HSIA, EDWARD, SHIEH, MING-HUEI, HE, YI, HAMILTON, DARLENE, G, RANDOLPH, MARK, W, CHEN, PAU-LING, AJIMINE, ERIC
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:An array of non-volatile memory cells includes active columns of cells wherein a data pattern may be stored adjacent to damaged or inactive columns wherein data is not stored. A method of storing a data pattern and reproducing the data pattern within such an array comprises storing a charge within a selected plurality of the memory cells within the active column. The selected plurality of memory cells represents a portion of the data pattern. An inactive memory cell programming pattern is identified. The inactive memory cell programming pattern identifies all, or a selected plurality, of the memory cells in the inactive column in which a charge is to be stored for the purpose of periodically storing a charge in the memory cells first inactive column to prevent over erasure, during bulk erase, and leakage from the inactive cells to adjacent active cells. A charge is stored on the selected plurality of the memory cells in the first inactive column. The data pattern is reproduced reading each memory cell within the first active column.