SEMICONDUCTOR STRUCTURES WITH STRUCTURAL HOMOGENEITY

Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free. The method comprises the formation of a semiconductor layer (16) over a top surface of the substrate (12), the semiconductor lay...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YANG, Vicky, K, VINEIS, Christopher, J, CURRIE, Matthew, T, WESTHOFF, Richard, LEITZ, Christopher, W
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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