SEMICONDUCTOR STRUCTURES WITH STRUCTURAL HOMOGENEITY

Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free. The method comprises the formation of a semiconductor layer (16) over a top surface of the substrate (12), the semiconductor lay...

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Bibliographische Detailangaben
Hauptverfasser:	YANG, Vicky, K, VINEIS, Christopher, J, CURRIE, Matthew, T, WESTHOFF, Richard, LEITZ, Christopher, W
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free. The method comprises the formation of a semiconductor layer (16) over a top surface of the substrate (12), the semiconductor layer (16) including at least two elements, the elements being distributed to define an initial compositional variation within the semiconductor layer, in which forming the semiconductor layer comprises forming the semiconductor layer (16) having a haze, and planarizing the top surface of the semiconductor layer (16) having a haze.