MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, AND THEIR MANUFACTURING METHOD

In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous o...

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Bibliographische Detailangaben
Hauptverfasser:	HAYASHI, KAZUHIKO, YAMAMOTO, TETSUYA, ENDO, KEITARO, NARISAWA, HIROAKI, OHBA, KAZUHIRO, BESSHO, KAZUHIRO, KANO, HIROSHI, HOSOMI, MASANORI, KUBO, SHINYA, MIZUGUCHI, TETSUYA, HIGO, YUTAKA, SONE, TAKEYUKI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TESTING TRANSFORMERS
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Beschreibung
Zusammenfassung:	In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.