MAGNETORESISTIVE LAYER SYSTEM AND SENSOR ELEMENT WITH SAID LAYER SYSTEM

A magneto-resistive layer system, in which a layer arrangement is provided in an environment of a magneto-resistive layer stack working on the basis of the GMR effect or the AMR effect, in particular the layer arrangement generating a resulting magnetic field that acts upon the magneto-resistive layer stack. The layer arrangement has a first magnetic layer and a second magnetic layer, which are separated from one another by a non-magnetic intermediate layer and are ferromagnetically exchange-coupled via the intermediate layer. Furthermore, a sensor element having such a layer system is provided, particularly for the detection of magnetic fields with respect to their strength and/or direction.