Method of manufacturing memory device comprising gate having uniformly distributed silicon nano dots

Provided is a method of manufacturing a memory device which comprises a gate including uniformly distributed silicon nano dots. The method includes forming a gate on a substrate, the gate including an insulating film, sequentially stacked nano dot layers separated by a predetermined distance, and a conductive film pattern, forming a source region and a drain region contacting the gate in the substrate, and forming first and second metal layers on the source region and the drain region, respectively.