METHOD OF FORMING METAL OXIDE FILM AND MICROWAVE POWER SOURCE UNIT FOR USE IN THE METHOD

A method of forming a metal oxide film by the plasma CVD method and comprising reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface...

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Bibliographische Detailangaben
Hauptverfasser: KOBAYASHI, AKIRA, KURASHIMA, HIDEO, IEKI, TOSHIHIDE, INAGAKI, HAJIME, NAMIKI, TSUNEHISA, YAMADA, KOJI
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A method of forming a metal oxide film by the plasma CVD method and comprising reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.