III-Nitride light-emitting devices with improved high-current efficiency
A light-emitting semiconductor device (20) comprises a III-Nitride active region (28) and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confi...
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Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A light-emitting semiconductor device (20) comprises a III-Nitride active region (28) and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer (30), for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an In x Al y Ga 1-x-y N (0 ¤ x ¤ 1, 0 ¤ y ¤ 1, x + y ¤ 1), and a spacer layer interposing the light emitting layer and the In x Al y Ga 1-x-y N layer. The spacer layer may advantageously space the In x Al y Ga 1-x-y N layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light. |
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