Semiconductor apparatus and a production method thereof
The terminal conductor(16) to be connected to a drain electrode of the n-MOSFET(13) of the MOS module part(12) and the terminal conductors(18-1) and (18-2) to be connected to first and second drain electrodes of the n-MOSFET(15) of the MOS module part(14) are externally connected via the positive el...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The terminal conductor(16) to be connected to a drain electrode of the n-MOSFET(13) of the MOS module part(12) and the terminal conductors(18-1) and (18-2) to be connected to first and second drain electrodes of the n-MOSFET(15) of the MOS module part(14) are externally connected via the positive electrode external connection terminal(22). Furthermore, the terminal conductors (17-1) and (17-2) to be connected to the first and the second source electrodes of the n-MOSFET(13) of the MOS module part (12) and the terminal conductor (19) to be connected to a source electrode of the n-MOSFET (15) of the MOS module part (14) are externally connected via the negative electrode external connection terminal (24). According to such external connection, the semiconductor apparatus (20) in which the n-MOSFET (13) of the MOS module part(12) and the n-MOSFET(15) of the MOS module part (14) are connected in parallel, is produced. In addition, the two n-MOSFETs are connected in series by externally connecting the source electrode of an n-MOSFET of the MOS module part(12) and a terminal conductor to be connected to a second drain electrode of the MOS module part(14), via an intermediate external connection terminal. |
---|