IN-SITU FORMATION OF METAL INSULATOR METAL CAPACITORS CROSS REFERENCE TO RELATED APPLICATIONS

The invention describes an in-situ method of fabricating a metal insulator metal (MIM) capacitor and products formed by the same. The method utilizes atomic layer deposition (ALD) or metal-organic chemical vapor deposition (MOCVD). In the method, a metal precursor is sequentially reacted with a nitrogen source, oxidant, and then a nitrogen source again. Reaction with the nitrogen source generates the outermost conductive metal nitride (MN) layers ( 121 ). Reaction with the oxidant generates an inner dielectric metal oxide (MOx) layer ( 110 ). Alternatively, or in addition, the metal precursor can be reacted with a mixture of oxidant and nitrogen source to generate inner dielectric layer(s) ( 231, 232, 310 ) of metal oxynitride (MOxNy). Because the same metal is used throughout the capacitor, the layers in the MIM capacitor exhibits excellent compatibility and stability.