LITHOGRAPHIC METHOD FOR WIRING A SIDE SURFACE OF A SUBSTRATE
In a lithographic proximity method for wiring an end or internal side surface of a substrate, the required exposure of strips, defining the wiring pattern, is performed by a mask having a diffraction structure to deflect exposure radiation to the side surface. An exposure beam, which is perpendicula...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In a lithographic proximity method for wiring an end or internal side surface of a substrate, the required exposure of strips, defining the wiring pattern, is performed by a mask having a diffraction structure to deflect exposure radiation to the side surface. An exposure beam, which is perpendicularly incident on the mask, is used so that enhanced tolerance for proximity gap width variations is obtained. The method allows manufacture of accurate and fine wiring. |
---|