High-frequency bipolar transistor

A high-frequency switching transistor (100) comprises a collector area (104), which has a first conductivity type, a first barrier area (108) bordering on the collector area (104), which has a second conductivity type which differs from the first conductivity type, and a semiconductor area (114) bordering on the first barrier area, which has a dopant concentration which is lower than a dopant concentration of the first barrier area (108). Further, the high-frequency switching transistor (100) has a second barrier area (120) bordering on the semiconductor area (114), which has a first conductivity type, as well as a base area (122) bordering on the second barrier area (120), which has a second conductivity type. Additionally, the high-frequency switching transistor (100) comprises a third barrier area (128) bordering on the semiconductor area (114), which has the second conductivity type and a higher dopant concentration than the semiconductor area (114). Further, the high-frequency switching transistor (100) has an emitter area (130) bordering on the third barrier area (128), which has the first conductivity type. Thereby it is possible to provide a high-frequency switching transistor, which has a lower bias voltage, a higher switchable power as well as a shorter switching time.