Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device, comprising the steps of: forming a peeling layer containing an element and a terminal electrode over a first substrate; peeling the peeling layer and the terminal electrode from the first substrate; pasting a second substrate to the peeling layer an...
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| Hauptverfasser: | , , , , |
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | A method for manufacturing a semiconductor device, comprising the steps of: forming a peeling layer containing an element and a terminal electrode over a first substrate; peeling the peeling layer and the terminal electrode from the first substrate; pasting a second substrate to the peeling layer and the terminal electrode with an adhesive material; and pressure-bonding an FPC to the terminal electrode in which a circumference is covered with a protective layer. |
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