PROJECTION OBJECTIVE FOR A PROJECTION EXPOSURE APPARATUS

The invention concerns a projection exposure apparatus for microlithography using a wavelength ¤ 193 nm. Said exposure apparatus comprises a primary light source (8501), an illumination system and a projection objective (8571), wherein the illumination system comprises a plurality of raster element...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	MANN, HANS-JUERGEN, ULRICH, WILHELM, SINGER, WOLFGANG, WANGLER, JOHANNES
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	The invention concerns a projection exposure apparatus for microlithography using a wavelength ¤ 193 nm. Said exposure apparatus comprises a primary light source (8501), an illumination system and a projection objective (8571), wherein the illumination system comprises a plurality of raster elements (8509) for receiving light from said primary light source (8501) and wherein said illumination system uses light for said plurality of raster elements to form a field having a plurality of field points in an image plane. Said illumination system has a chief ray (8597) associated with each of said plurality of field points thus defining a plurality of chief rays. Said plurality of chief rays of, when impinging onto a pattern bearing mask in a direction from said primary light source (8501) toward said pattern bearing (8567) mask in the image plane of the illumination system is inclined away from an optical axis (8547) of said projection objective.