Large-size substrate for photolithographic applications

A large-size substrate adapted for light exposure is of a plate shape having a diagonal length or diameter of 500-2,000 mm, a thickness of 1-20 mm, and a peripheral surface with a roughness Ra of 0.05-0.4 µm. The number of particles released from the substrate periphery during cleaning is minimized,...

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Bibliographische Detailangaben
Hauptverfasser:	KUSABIRAKI, DAISUKE, SHIBANO, YUKIO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTROGRAPHY FREQUENCY-CHANGING GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GLASS GRINDING HOLOGRAPHY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES MATERIALS THEREFOR METALLURGY MINERAL OR SLAG WOOL NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHING TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING
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Beschreibung
Zusammenfassung:	A large-size substrate adapted for light exposure is of a plate shape having a diagonal length or diameter of 500-2,000 mm, a thickness of 1-20 mm, and a peripheral surface with a roughness Ra of 0.05-0.4 µm. The number of particles released from the substrate periphery during cleaning is minimized, leading to an improved yield in the cleaning step. The substrate can be manually handled, achieving an improvement in substrate quality without a need for a handling mechanism.