Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

The method involves forming a cushioning pad (60) on an insulating film. The insulation film is removed from a bottom portion of a via hole (VH) by etching. A wiring (63) connected with a pad electrode (53) is formed to extend from the via hole onto the cushioning pad. A conductive terminal (66) is...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: TAKAO, YUKIHIRO
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The method involves forming a cushioning pad (60) on an insulating film. The insulation film is removed from a bottom portion of a via hole (VH) by etching. A wiring (63) connected with a pad electrode (53) is formed to extend from the via hole onto the cushioning pad. A conductive terminal (66) is formed on the wiring and the cushioning pad. A semiconductor substrate (51) is divided into a set of semiconductor die. An independent claim is also included for a ball grid type semiconductor device having a semiconductor substrate.