Process for forming a thin film of TiSiN, in particular for phase change memory devices

Process for forming a thin film of TiSiN, in particular for phase change memory devices

Preparation of a film of a complex of titanium, silicon and nitrogen (TiSiN) involves: (a) depositing a TiN (titanium nitrogen) film; and (b) exposing a film of a complex of titanium and nitrogen (TiN) to a silicon releasing gas without previously exposing the film to a carbon reducing treatment.

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Bibliographische Detailangaben
1. Verfasser: ZONCA, ROMINA
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Preparation of a film of a complex of titanium, silicon and nitrogen (TiSiN) involves: (a) depositing a TiN (titanium nitrogen) film; and (b) exposing a film of a complex of titanium and nitrogen (TiN) to a silicon releasing gas without previously exposing the film to a carbon reducing treatment.