METHOD AND DEVICE TO FORM HIGH QUALITY OXIDE LAYERS OF DIFFERENT THICKNESS IN ONE PROCESSING STEP

METHOD AND DEVICE TO FORM HIGH QUALITY OXIDE LAYERS OF DIFFERENT THICKNESS IN ONE PROCESSING STEP

The present invention relates to a method for forming high quality oxide layers of different thickness over a first and a second semiconductor region in one processing step. The method comprises the steps of: doping the first and the second semiconductor region with a different dopant concentration,...

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Bibliographische Detailangaben
Hauptverfasser: LOO, JOSINE, J., G., P, PONOMAREV, YOURI, SCHAIJK, ROBERTUS, T., F
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present invention relates to a method for forming high quality oxide layers of different thickness over a first and a second semiconductor region in one processing step. The method comprises the steps of: doping the first and the second semiconductor region with a different dopant concentration, and oxidising, during the same processing step, both the first and the second semiconductor region under a temperature between 500° C. and 700° C., preferably between 500° C. and 650° C. A corresponding device is also provided. Using a low-temperature oxidation in combination with high doping levels results in an unexpected oxidation rate increase.