ORGANIC SEMICONDUCTOR DEVICE AND METHOD

A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a t...

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Bibliographische Detailangaben
Hauptverfasser: GAMOTA, DANIEL, R, SCHEIFERS, STEVEN, M, BRAZIS, PAUL, W., JR, ZHANG, JIE, LACH, LAWRENCE, E
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.