Method for fabricating cantilevered type film bulk acoustic resonator and film bulk acoustic resonator fabricated by the same
A bottom electrode (120) is formed directly on a sacrificial layer (160) and on exposed dielectric layer (110) on the substrate (100). A top electrode (140) is formed on the piezoelectric layer (120) on the bottom electrode. The sacrificial layer is removed after top electrode formation to form air...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A bottom electrode (120) is formed directly on a sacrificial layer (160) and on exposed dielectric layer (110) on the substrate (100). A top electrode (140) is formed on the piezoelectric layer (120) on the bottom electrode. The sacrificial layer is removed after top electrode formation to form air gap (170). Another dielectric layer is formed on the top electrode. An independent claim is also included for film bulk acoustic resonator. |
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