Device and method for producing single crystals by vapour deposition

Preparing crystals of silicon carbide, group III-nitride and/or its alloys involves continuously feeding vapor species containing elements of the crystal through an upstream opening (22) of the growth surface of a seed crystal contained in a heated growth enclosure; removing the undeposited vapor sp...

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Bibliographische Detailangaben
Hauptverfasser:	RABACK, PETER, JANZEN, ERIK, ELLISON, ALEXANDRE
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Preparing crystals of silicon carbide, group III-nitride and/or its alloys involves continuously feeding vapor species containing elements of the crystal through an upstream opening (22) of the growth surface of a seed crystal contained in a heated growth enclosure; removing the undeposited vapor species through a opening downstream (25a) of the growth surface and passing an additional gas flow containing a halogen. An independent claim is included for a device for preparing the crystals.