METHOD FOR MASKING A RECESS IN A STRUCTURE WITH A LARGE ASPECT RATIO

Masking first recesses of a structure having large aspect ratio comprises applying filler layer (5) so that a hollow space (6) is formed in first recesses, and removing filler layer up to hollow space region by etching. Etching is also carried out in hollow space, and filler layer is removed more quickly from first recesses than from further recesses. Etching process is stopped after removing filler layer from first recesses. Preferred Features: The etching process is an isotropic etching process. The structure has connectors (4) having a sacrificial layer applied on the surface before applying the filler layer. The filler layer is a silicon oxide layer deposited using a TEOS process.