SEMICONDUCTOR SATURABLE ABSORBER MIRROR DEVICE

A "low field enhancement" (LFR) semiconductor saturable absorber device design in which the structure is changed such that it has a resonant condition. Consequently, the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher mo...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KELLER, Ursula, SPÜHLER, Gabriel, J, KRAINER, Lukas, WEINGARTEN, Kurt
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DEVICES USING STIMULATED EMISSION ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	A "low field enhancement" (LFR) semiconductor saturable absorber device design in which the structure is changed such that it has a resonant condition. Consequently, the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the field in the free space. According to one embodiment, the absorber device is a Semiconductor Saturable Absorber Mirror (SESAM) device. In contrast with SESAMs according to the state of the art, a structure including the absorber and being placed on top of a Bragg reflector is provided, which essentially fulfills a resonance condition whereby a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.