Reflective X-ray microscope and inspection system for examining objects with wavelengths 100nm

A first subsystem with a first concave mirror (S1) and a second convex mirror (S2) both centered on an optical axis (HA) fits in a beam path from an object plane to an image plane and has a first optical element for wavelengths less than 30 nm. A first image (Z) is formed in a first-image plane (2)....

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Bibliographische Detailangaben
Hauptverfasser:	ZIBOLD, AXEL DR, REINECKE, WOLFGANG DR, HARNISCH, WOLFGANG, PAUSCHINGER, DIETER, ENGEL, THOMAS DR, ULRICH, WILHELM, WEDOWSKI, MARCO, MANN, HANS-JÜRGEN, DINGER, UDO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	A first subsystem with a first concave mirror (S1) and a second convex mirror (S2) both centered on an optical axis (HA) fits in a beam path from an object plane to an image plane and has a first optical element for wavelengths less than 30 nm. A first image (Z) is formed in a first-image plane (2). A second subsystem fits in a beam path after the first image. Independent claims are also included for the following: (a) An inspection system for examining objects, e.g. masks for microlithography with wavelengths less than 100 nm, preferably less than 30 nm; (b) A method for inspecting objects, e.g. masks for microlithography with wavelengths less than 100 nm.