FORMING METHOD AND FORMING SYSTEM FOR INSULATION FILM

A gate insulation film (104) of a MISFET (100) is constituted of a silicon oxide film (106), silicon nitride film (107), and high-permittivity film (108). The silicon oxide film (106) and silicon nitride film (107) are formed by microwave plasma processing with a radial line slot antenna.

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Bibliographische Detailangaben
Hauptverfasser:	KUMAI, TOSHIKAZU, NAKANISHI, TOSHIO, MURAKAWA, SHIGEMI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A gate insulation film (104) of a MISFET (100) is constituted of a silicon oxide film (106), silicon nitride film (107), and high-permittivity film (108). The silicon oxide film (106) and silicon nitride film (107) are formed by microwave plasma processing with a radial line slot antenna.