SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR, AND PLATING SOLUTION

The present invention relates to relates to a semiconductor device and a method for manufacturing the same having an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses for interconnects formed in the surface of a semiconductor subst...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	INOUE, HIROAKI, WANG, XINMING, MATSUMOTO, MORIJI, KANAYAMA, MAKOTO, KIMURA, NORIO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to relates to a semiconductor device and a method for manufacturing the same having an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses for interconnects formed in the surface of a semiconductor substrate, and having a protective film formed on the surface of the interconnects to protect the interconnects. The semiconductor device having an embedded interconnect structure, including a protective film formed selectively on the surface of exposed interconnects, wherein the protective film has a flattened surface.