A method of forming a CMOS device

Fabricating complimentary metal oxide semiconductor device on substrate by forming gate structures on gate insulator layer, forming insulator structure with thick insulator component on gate structures and portion of substrate, performing two series of ion implantation procedures in device regions,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ANG, CHEW HOE, SIAH, SOH YUN, ZHENG, JIA ZHEN, HSIA, LIANG CHOO, CHOOI, SIMON, LIM, ENG HUA
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!