Element for coupling electrical energy into a processing chamber and processing system comprising such an element

A processing system (12) for processing a substrate (18) with a plasma (28) comprises a processing chamber (13) defining a processing space (14) and including a substrate support (17) therein for supporting a substrate (18) in the processing space (14) and a gas inlet (20) for introducing a process...

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Bibliographische Detailangaben
Hauptverfasser:	BRCKA, JOSEF, CONSOLI, PAUL LOUIS
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	A processing system (12) for processing a substrate (18) with a plasma (28) comprises a processing chamber (13) defining a processing space (14) and including a substrate support (17) therein for supporting a substrate (18) in the processing space (14) and a gas inlet (20) for introducing a process gas into said processing space (14). A plasma source is operable for creating a plasma (28) in the processing space (14) from process gas introduced therein. The plasma source comprises a dielectric window (24a) which interfaces with the processing chamber (12) proximate the processing space (14) and an inductive element (10) positioned outside of the chamber (12) and proximate the dielectric window (24a). The inductive element (10) is operable for coupling electrical energy through the dielectric window (24a) and into the processing space (14) to create a plasma (28) therein and comprises a variety of alternative designs for providing a dense, uniform plasma.