Process of making an all-silicon microphone
The upper and lower capacitive plates are formed by etching the single crystal silicon layers that are doped with boron and germanium. A capacitive output signal is produced in response to changes in the distance between the capacitor plates that occur as a result of sound induced vibration.
Gespeichert in:
Hauptverfasser: | , , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The upper and lower capacitive plates are formed by etching the single crystal silicon layers that are doped with boron and germanium. A capacitive output signal is produced in response to changes in the distance between the capacitor plates that occur as a result of sound induced vibration. |
---|