PROCESS FOR PREPARATION OF POLYCRYSTALLINE SILICON

PROCESS FOR PREPARATION OF POLYCRYSTALLINE SILICON

A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6-nSi2 where n is a value of 0 to 6 and (B) co-feeding the effluent mi...

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Bibliographische Detailangaben
Hauptverfasser: KENDIG, JAMES, EDWARD, LANDIS, DAVID, RUSSELL, MCQUISTON, TODD, MICHAEL, ZALAR, MICHAEL, MATTHEW
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Beschreibung
Zusammenfassung:A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6-nSi2 where n is a value of 0 to 6 and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within a range of about 600° C. to 1200° C. thereby effecting hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes.