Ultrafine-grain-copper-base sputter targets

The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent e...

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Bibliographische Detailangaben
Hauptverfasser:	GILMAN, PAUL S, PERRY, ANDREW C
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 mu m for improving sputter uniformity and reducing sputter target arcing.