METHOD FOR PRODUCING METALLIC BIT LINE CONTACTS

A memory cell and method of forming the same is provided. To make contact between a bit line and a select transistor of a dynamic memory unit on a semiconductor wafer, a contact hole is filled with a metal or a metal alloy. A liner layer may be introduced between the semiconductor substrate and the...

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Hauptverfasser: URBANSKY, NORBERT, STAUB, RALF, AMON, JUERGEN
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A memory cell and method of forming the same is provided. To make contact between a bit line and a select transistor of a dynamic memory unit on a semiconductor wafer, a contact hole is filled with a metal or a metal alloy. A liner layer may be introduced between the semiconductor substrate and the metal filling. The semiconductor substrate has a doped region in the contact hole.