A phase change material electronic memory structure

The invention includes an electronic memory structure. The electronic memory structure includes a substrate (410). A substantially planar first conductor (420) is formed adjacent to the substrate. An interconnection layer (430) is formed adjacent to the first conductor. A phase change material element (440) is formed adjacent to the interconnection layer. The interconnection layer includes a conductive interconnect structure (432) extending from the first conductor to the phase change material element. The interconnect structure includes a first surface physically connected to the first conductor. The interconnect structure further includes a second surface attached to the phase change material element. The second surface area of the second surface is substantially smaller than a first surface area of the first surface. A substantially planar second conductor (450) is formed adjacent to the phase change material element.