METHOD AND DEVICE FOR MOUNTING AND PREPARING A GEMSTONE OR INDUSTRIAL DIAMOND FOR THE FORMATION OF A MARK ON THE SURFACE THEREOF

To form a micro mark on the table (7a) of a diamond (7), a holder or dop (11) with the diamond (7) is spun, a photo resist is applied to the table (7a), the resist is baked by heating the base of the dop (11), and the dop (11) is transferred to the table (30) of apparatus for exposing the resist. Th...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	GUY, KEITH, BARRY, WILLIS, MAXWELL, RALPH, CROWDER, MICHAEL, JOHN, SMITH, JAMES, GORDON, CHARTERS
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR ARTIFICIAL STONE BRACELETS CEMENTS CERAMICS CHEMISTRY CINEMATOGRAPHY CLADDING OR PLATING BY SOLDERING OR WELDING COINS COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DECORATIVE ARTS ELECTROGRAPHY HABERDASHERY HOLOGRAPHY HUMAN NECESSITIES JEWELLERY LIME, MAGNESIA MACHINE TOOLS MACHINES, APPARATUS OR TOOLS FOR ARTISTIC WORK, e.g. FORSCULPTURING, GUILLOCHING, CARVING, BRANDING, INLAYING MATERIALS THEREFOR METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY MOSAICS ORIGINALS THEREFOR OTHER PERSONAL ADORNMENTS PAPERHANGING PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRODUCING DECORATIVE EFFECTS REFRACTORIES SLAG SOLDERING OR UNSOLDERING TARSIA WORK TRANSPORTING TREATMENT OF NATURAL STONE WELDING WORKING BY LASER BEAM WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	To form a micro mark on the table (7a) of a diamond (7), a holder or dop (11) with the diamond (7) is spun, a photo resist is applied to the table (7a), the resist is baked by heating the base of the dop (11), and the dop (11) is transferred to the table (30) of apparatus for exposing the resist. The resist is exposed using an exposure radiation with a pattern which is a reduced image of a mask (35), working through an objective lens (38). The exposure radiation is projected by a radiation source (31) and can be 350 to 450 nm. In order to locate, orientate and focus the image, the radiation source (31) is arranged to project light in the wavelength range 500 to 550 nm, which does not affect the resist, forming a setting-up image on the table (7a), the setting-up image is viewed in an observation plane (44) through the objective lens (38) and a beam splitter (36). After exposure, the resist is developed and the exposed area of the table (7a) is then milled using a plasma.